smd type ic smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source features integrated temperature sensor esd protection q101 compliant standard level compatible absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 55 v drain-gate voltage i dg = 250 a v dgr 55 v gate-source voltage v gs 20 v drain current (dc) t mb =25 ,v gs =10v i d 140 a drain current (dc) t mb = 100 ,v gs =10v i d 75 a peak drain current *1 i dm 560 a total power dissipation t mb =25 p tot 272 w gate-source clamping current (continuous) 10 ma gate-source clamping current *3 50 ma fet to temperature sense diode isolation voltage v isol(fet-tsd) 100 v storage & operating temperature t stg ,t j -55to175 140 a 75 a pulsed reverse drain current *1 i drm 560 a non-repetitive avalanche energy *2 e ds(al)s 460 j thermal resistance junction to mounting base r th j-mb 0.55 k/w thermal resistance junction to ambient r th j-a 50 k/w *1tmb=25 ; pulsed; tp 10 s; *2 unclamped inductive load; i d =68a;v ds 55 v; v gs =10v;r gs = 50;starting tj = 25 *3 tp = 5 ms; =0.01 *4 human body model; c = 100 pf; r = 1.5 k i dr reverse drain current (dc) t mb =25 i gs(cl) 4008-318-123 sales@twtysemi.com 1of 2 http://www.twtysemi.com smd type ic smd type transistors KUK7107-55ATE smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i d =0.25ma;v gs =0v;t j =25 55 v i d =0.25ma;v gs =0v;t j =-55 50 v i d =1ma;v ds =v gs ;t j =25 234v i d =1ma;v ds =v gs ;t j = 175 1v i d =1ma;v ds =v gs ;t j =-55 4.4 v v ds =55v;v gs =0v;t j =25 0.1 10 a v ds =55v;v gs =0v;t j = 175 250 a gate-source breakdown voltage v (br)gss i g = 1ma;-55 t j 175 20 22 v v gs = 10 v; v ds =0v;t j =25 22 1000 na v gs = 10 v; v ds =0v;t j = 175 10 a v gs =10v;i d =50a;t j =25 .5.87 m v gs =10v;i d =50a;t j = 175 14 m forward voltage, temperature sense diode v f i f = 250 ma 648 658 668 mv temperature coefficient temperature sense diode s f i f = 250 ma;-55 t j 175 -1.4 -1.54 -1.68 mv/k temperature sense diode forward voltage hysteresis v hys 125 a i f 250 a 25 32 50 mv total gate charge q g(tot) 116 nc gate-to-source charge q gs 19 nc gate-to-drain (miller) charge q gd 50 nc input capacitance c iss 4500 pf output capacitance c oss 960 pf reverse transfer capacitance c rss 510 pf turn-on delay time t d(on) 36 ns rise time t r 115 ns turn-off delay time t d(off) 159 ns fall time t f 111 ns internal drain inductance l d measured from upper edge of drain mounting base to center of die 2.5 nh internal source inductance l s measured from source lead to source bond pad 7.5 nh source-drain (diode forward) voltage v sd i s = 25a; v gs = 0 v 0.85 1.2 v reverse recovery time t rr i s =20a;d if /d t = -100 a/s; 80 ns recovered charge q r v gs =-10v;v ds = 30 v 200 nc drain-source breakdown voltage v (br)dss v gs(th) gate-source threshold voltage v dd =30v;r l =1.2;v gs =10v;r g = 10 r dson drain-source on-state resistance zero gate voltage drain current i dss v gs =10v;v dd =44v;i d =25a gate-source leakage current i gss v gs =0v;v ds =25v;f=1mhz KUK7107-55ATE 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification
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